GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (1) , 10-12
- https://doi.org/10.1109/55.289478
Abstract
We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in the collector. The DHBT showed improved current-voltage characteristics at low collector-emitter bias compared with those of a DHBT without the heavily doped GaInP layer, while maintaining a high breakdown voltage (BV/sub CEO//spl sim/20 V). Small area, self-aligned emitter transistors with two 2/spl times/5 /spl mu/m/sup 2/ emitter fingers were fabricated and exhibited f/sub T/ and f/sub max/ of 53 GHz and 75 GHz, respectively. These results indicate the promise of carbon-doped base GaInP/GaAs DHBT's for high-power microwave applications.Keywords
This publication has 12 references indexed in Scilit:
- Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistorIEEE Electron Device Letters, 1993
- Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped baseIEEE Electron Device Letters, 1993
- Small offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs double-barrier bipolar transistorIEEE Electron Device Letters, 1992
- InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBEElectronics Letters, 1992
- Photoluminescence characterization of nonradiative recombination in carbon-doped GaAsApplied Physics Letters, 1992
- Conduction-band discontinuity in InGaP/GaAs measured using both current-voltage and photoemission methodsApplied Physics Letters, 1992
- Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressureApplied Physics Letters, 1991
- Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodesApplied Physics Letters, 1991
- InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector regionApplied Physics Letters, 1990
- Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1990