InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region

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Abstract
Sulfur δ doping in InP by metalorganic vapor phase epitaxy is reported. A peak carrier concentration of 7×1017 cm−3 with a full width at half maximum of 30 nm has been measured by the electrochemical capacitance‐voltage technique. It is shown that by inserting the δ‐doping spike in the collector region of InP/InGaAs double heterojunction transistors, the effective barrier height at the base‐collector interface can be reduced without increasing the base‐collector capacitance and excellent transistor characteristics can be realized.