N p n N double-heterojunction bipolar transistor on InGaAsP/InP

1 July 1985

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 47 (1) , 28-30
https://doi.org/10.1063/1.96392

Abstract

Double‐heterojunction bipolar transistors have been fabricated on InGaAs(P)/InP with current gains of up to 200. Transistors with a p⁺‐InGaAs/N‐InP base/collector junction exhibited drastic gain reduction at low collector bias voltages which is ascribed to the electron repelling effect of the conduction‐band spike formed at the collector heterojunction. To overcome this complication a thin n‐InGaAs transition layer was inserted between the ternary base and the InP wide‐gap collector. The resulting nN double‐layer collector structure leads to excellent current/voltage characteristics.

Keywords

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