Photoelectrochemical etching of n-InP in a thin-film cell
- 18 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (25) , 2655-2657
- https://doi.org/10.1063/1.101964
Abstract
The laser‐induced photoelectrochemical etching of n‐InP using a thin‐film cell has been studied. A minimum in the reaction time was found as a function of etchant concentration for a given laser intensity. External potential biasing enhanced the reaction only for relatively low etchant concentrations.Keywords
This publication has 7 references indexed in Scilit:
- The effect of nonlinear ion transport on the rate of laser-induced electrochemical etching of semiconductorsJournal of Applied Physics, 1990
- Signal generation mechanisms in scanning-electron acoustic microscopy of ionic crystalsJournal of Applied Physics, 1990
- Basic mechanisms in laser etching and depositionApplied Physics A, 1986
- Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF SolutionsJournal of the Electrochemical Society, 1986
- Photochemical microetching of GaAsElectronics Letters, 1983
- Photoelectrochemical etching of integral lenses on InGaAsP/InP light-emitting diodesApplied Physics Letters, 1983
- Localized laser etching of compound semiconductors in aqueous solutionApplied Physics Letters, 1982