MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L212-214
- https://doi.org/10.1143/jjap.26.l212
Abstract
InGaP has been grown on GaP substrates by low pressure metalorganic chemical vapor deposition (MOCVD) using triethylindium, triethylgallium and phosphine. A buffer layer with step-graded alloy composition is inserted between the GaP substrate and the InGaP layer with a constant composition to reduce the influence of lattice mismatch. A trial fabrication of In0.34Ga0.66P light-emitting diodes(LEDs) has indicated that the diode efficiency is about one order of magnitude lower than commercially available GaAsP yellow LEDs. Further improvement in the efficiency is also discussed.Keywords
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