Molecular beam epitaxy of InSb films on CdTe
- 31 December 1982
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (2) , 450-452
- https://doi.org/10.1016/0022-0248(82)90125-7
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Molecular Beam Epitaxy of In-Doped CdTeJapanese Journal of Applied Physics, 1982
- Molecular Beam Epitaxy of In-Doped CdTeJapanese Journal of Applied Physics, 1982
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981
- CdTe–InSb heterojunctionsPhysica Status Solidi (a), 1980
- RHEED Study of InSb Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1980
- Minimum Al0.5Ga0.5As-GaAs heterojunction width determined by sputter-Auger techniquesApplied Physics Letters, 1979
- X-ray study of AlxGa1−xAs epitaxial layersPhysica Status Solidi (a), 1975
- Étude de la formation d'Héteŕojonctions CdTeInSbThin Solid Films, 1968