Dispersion of MOS capacitance-voltage characteristics resulting from the random channel dopant ion distribution
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (11) , 2222-2232
- https://doi.org/10.1109/16.333845
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
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