Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
- 20 November 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (21) , 3423-3425
- https://doi.org/10.1063/1.1327276
Abstract
In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mgdopedp-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1×10 17 cm −3 . The as-grown Mgdoped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealingtemperatures ranging from 350 to 650 °C. Linear I–V ohmic characteristics were observed with specific resistance as low as 1.0×10 −4 Ω cm 2 for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1×10 19 cm −3 . Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5×10 −6 Ω cm 2 .Keywords
This publication has 16 references indexed in Scilit:
- Low-resistance ohmic contacts to p-type GaNApplied Physics Letters, 1999
- Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaNJournal of Electronic Materials, 1999
- Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substratesApplied Physics Letters, 1998
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaNMRS Proceedings, 1996
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- High electron mobility transistor based on a GaN-AlxGa1−xN heterojunctionApplied Physics Letters, 1993
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992