Vertical Integration of GaAs/AlGaAs Laser Diode and Vertical JFET
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L431
- https://doi.org/10.1143/jjap.27.l431
Abstract
An embedded heterostructure laser and vertical JFET are integrated in a vertical configuration employing Zn diffusion and a selective liquid phase epitaxy method. The vertical JFET shares the current path with the laser, and can handle high power to effectively control the light output of the laser. Gate-voltage-controlled laser light output characteristics are demonstrated, and when V DS=4.3 V, the modulation depth of the laser output is as large as 98% for the gate voltage of -4 V.Keywords
This publication has 9 references indexed in Scilit:
- A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integrationIEEE Electron Device Letters, 1987
- Recent progress in optoelectric integrated circuits (OEIC's)IEEE Journal of Quantum Electronics, 1986
- Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semi-insulating GaAsJournal of Lightwave Technology, 1986
- Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuitApplied Physics Letters, 1982
- A comparison of semiconductor devices for high-speed logicProceedings of the IEEE, 1982
- InGaAsP-InP Heterojunction Phototransistors and Light AmplifiersJapanese Journal of Applied Physics, 1981
- Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currentsApplied Physics Letters, 1980
- Monolithic integration of a GaAlAs injection laser with a Schottky-gate field effect transistorApplied Physics Letters, 1980
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975