A high performance monolithic In/sub 0.53/Ga/sub 0.47/As voltage-tunable transimpedance amplifier
- 1 September 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (9) , 675-677
- https://doi.org/10.1109/68.59347
Abstract
The fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 k Omega by controlling the gate bias of the feedback transistor.Keywords
This publication has 11 references indexed in Scilit:
- In/sub 0.53/Ga/sub 0.47/As junction field-effect transistors as tunable feedback resistors for integrated receiver preamplifiersIEEE Electron Device Letters, 1989
- Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifierIEEE Transactions on Electron Devices, 1988
- Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifierIEEE Electron Device Letters, 1988
- A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supplyIEEE Transactions on Electron Devices, 1988
- 5.2-GHz bandwidth monolithic GaAs optoelectronic receiverIEEE Electron Device Letters, 1988
- Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrateJournal of Lightwave Technology, 1986
- Active feedback lightwave receiversJournal of Lightwave Technology, 1986
- Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifierIEEE Electron Device Letters, 1986
- Saturation velocity determination for In0.53Ga0.47As field-effect transistorsApplied Physics Letters, 1981
- p-i-n /f.e.t. hybrid optical receiver for longer-wavelength optical communication systemsElectronics Letters, 1980