Characteristics of photoelastic waveguidesin SiGe/Si heterostructures
- 13 February 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (4) , 292-293
- https://doi.org/10.1049/el:19970206
Abstract
Singlemode photoelastic stripe waveguides with excess losses of ~2.7 dBcm–1 at a wavelength of 1.523 µm fabricated in SiGe/Si planar heterostructure waveguides using Si3N4 stressor layers are reported.Keywords
This publication has 9 references indexed in Scilit:
- Photoelastic waveguides in siliconElectronics Letters, 1996
- Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructuresIEEE Photonics Technology Letters, 1996
- Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguidesJournal of Applied Physics, 1995
- Passive integrated-optical waveguide structures by Ge-diffusion in siliconJournal of Lightwave Technology, 1994
- Integration of waveguides and photodetectors in SiGe for 1.3 /spl mu/m operationIEEE Photonics Technology Letters, 1994
- Characterization of GeSi/Si Heteroepitaxial Layered Structures by Convergent Beam Electron DiffractionJapanese Journal of Applied Physics, 1993
- Silicon germanium optical waveguides with 0-5 dB/cm losses for singlemode fibre optic systemsElectronics Letters, 1992
- Growth of Si1−xGex, Strained Layers Using Atmospheric-Pressure CVDMRS Proceedings, 1991
- Strain-induced optical waveguiding in GaAs epitaxial layers at 1.15 μmElectronics Letters, 1979