Electrical and optical properties of heavily doped Mg- and Te-GaAs grown by liquid-phase epitaxy
- 29 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2) , 251-256
- https://doi.org/10.1016/0038-1101(88)90137-2
Abstract
No abstract availableKeywords
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