Study on ta diffusion barrier in Al/Si system
- 1 January 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (1) , 6-12
- https://doi.org/10.1007/s11664-999-0187-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Solid-Phase Reactions in Al Alloy/TiN/Ti/Si Systems Observed by In Situ Cross-Sectional TEMJapanese Journal of Applied Physics, 1995
- Low resistivity body-centered cubic tantalum thin films as diffusion barriers between copper and siliconJournal of Vacuum Science & Technology A, 1992
- Stability of TiB2 as a Diffusion Barrier on SiliconJournal of the Electrochemical Society, 1991
- Ta as a barrier for the Cu/PtSi, Cu/Si, and Al/PtSi structuresJournal of Vacuum Science & Technology A, 1990
- Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and WJournal of Materials Research, 1989
- Phase equilibria in metal-gallium-arsenic systems: Thermodynamic considerations for metallization materialsJournal of Applied Physics, 1987
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984
- Kinetics of compound formation in thin film couples of Al and transition metalsJournal of Vacuum Science and Technology, 1976