Selective metallization of n-type GaAs formed by projection-patterned excimer laser doping of Si
- 14 August 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (7) , 619-621
- https://doi.org/10.1063/1.101828
Abstract
Resistless microfabrication of the metallization of n‐type GaAs formed by projection‐patterned doping using a KrF excimer laser is described. Silane (SiH4 ) gas is used as a source material of the n‐type dopant of Si. Copper thin films with a linewidth as narrow as 3.4 μm are deposited selectively on the doped region by electroplating using a CuSO4 aqueous solution. Using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32×10−5 Ω cm2, which is one‐thirtieth of that of the conventional alloyed contacts.Keywords
This publication has 8 references indexed in Scilit:
- Projection patterned Si doping of GaAs in ambient SiH4 gas by a KrF excimer laserJournal of Vacuum Science & Technology B, 1988
- Submicron patterned doping of GaAs using a thin solid Si dopant source by transient excimer laser meltingJournal of Vacuum Science & Technology B, 1988
- Focused ion beam induced fine patterns of organogold filmsApplied Physics Letters, 1987
- Ultra-shallow high-concentration boron profiles for CMOS processingIEEE Electron Device Letters, 1985
- Device fabrication by nanolithography and electroplating for magnetic flux quantization measurementsApplied Physics Letters, 1984
- Properties of laser-assisted doping in siliconApplied Physics Letters, 1978
- Anodic Dissolution of N‐Type Gallium Arsenide under IlluminationJournal of the Electrochemical Society, 1975
- Anodic Dissolution and Selective Etching of Gallium PhosphideJournal of the Electrochemical Society, 1972