A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9) , 3960-3967
- https://doi.org/10.1063/1.339194
Abstract
A theoretical expression is derived describing the influence of the extrinsic and intrinsic point-defect concentration and of the strain energy on the critical radius of precipitates. It is shown that an exponential distribution of the precipitate radii leads to analytical expressions for the content of precipitating species present under the form of sub- and supercritical precipitate nuclei. The application of the obtained theoretical results is illustrated by a few case studies on silicon-oxide precipitates in silicon. Excellent agreement between the calculated and observed subcritical oxygen content in as-grown Czochralski silicon is obtained.This publication has 16 references indexed in Scilit:
- An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observationsJournal of Applied Physics, 1987
- Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issuesJournal of Applied Physics, 1986
- Oxygen Precipitation in SiliconMRS Proceedings, 1985
- Transmission Electron Microscope Studies of O, C, N Precipitation in Crystalline SiliconMRS Proceedings, 1985
- Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniquesPhysica Status Solidi (a), 1984
- Method to Measure the Precipitated and Total Oxygen Concentration in SiliconJournal of the Electrochemical Society, 1982
- Oxygen diffusion and thermal donor formation in siliconApplied Physics A, 1982
- Redissolution of precipitated oxygen in Czochralski-grown silicon wafersApplied Physics Letters, 1981
- Homogeneous nucleation of oxide precipitates in Czochralski-grown siliconApplied Physics Letters, 1980
- Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphousandPhysical Review B, 1976