Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices
- 15 February 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (4) , 1591-1599
- https://doi.org/10.1063/1.358912
Abstract
The optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 MΩ; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.This publication has 11 references indexed in Scilit:
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