Copper in silicon n+-p junctions
- 16 February 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 9 (2) , K165-K168
- https://doi.org/10.1002/pssa.2210090259
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- The Precipitation Behaviour of Copper in Silicon Single CrystalsPhysica Status Solidi (b), 1965
- Electrical Properties of Copper Segregates in Silicon P-N JunctionsJournal of the Electrochemical Society, 1965
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957
- Einkristalle undpn-Schichtkristalle aus SiliziumThe European Physical Journal A, 1954