Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3‐0.5PbTiO3 Thin Films by Chemical Solution Deposition

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Abstract
0.5Pb(Mg1/3Nb2/3)O3‐0.5PbTiO3 thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by varying the film formation procedures and heating processes. Depending on the multilayer film formation and appropriate heating process, the films were grown with a preferential orientation. The films showed a (100)‐preferred orientation and large grain‐size distribution when they were directly heat‐treated after deposition of amorphous layers. The films showed a (111)‐preferred orientation and small grain‐size distribution when formed layer‐by‐layer or directly heating amorphous thin films with a perovskite seed layer. These results were explained by the effect of a seed layer. Saturation polarization of the (111)‐preferred films was ∼35 µC/cm2, which was somewhat higher than that of the (100)‐preferred film. In contrast, the dielectric constant of the (100)‐preferred film was ∼1600, which was larger than that of the (111)‐preferred film.