Electromigration activation energy in pure aluminum films deposited by partially ionized beam technique
- 1 December 1995
- journal article
- Published by Elsevier in Scripta Metallurgica et Materialia
- Vol. 33 (12) , 1981-1986
- https://doi.org/10.1016/0956-716x(95)00450-a
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The structure and electromigration behaviour of aluminium films deposited by the partially ionized beam techniqueThin Solid Films, 1993
- The structure of aluminum films deposited by partially ionized beamScripta Metallurgica et Materialia, 1992
- Growth of epitaxial Ag/Si films by the partially ionized beam deposition techniqueJournal of Applied Physics, 1991
- Self-cleaning effect in partially ionized beam deposition of Cu filmsJournal of Applied Physics, 1989
- Reduction of interface hydrogen content by partially ionized beam deposition techniqueApplied Physics Letters, 1988
- Electromigration measuring techniques for grain boundary diffusion activation energy in aluminumSolid-State Electronics, 1981
- Formation of aluminium thin films in the presence of oxygen and nickelPhysica Status Solidi (a), 1979
- Diffusion in migrating interfacesActa Metallurgica, 1978
- Chemically induced grain boundary migrationActa Metallurgica, 1978
- Grain-boundary diffusionProgress in Materials Science, 1972