The structure of aluminum films deposited by partially ionized beam
- 1 August 1992
- journal article
- Published by Elsevier in Scripta Metallurgica et Materialia
- Vol. 27 (3) , 329-333
- https://doi.org/10.1016/0956-716x(92)90521-f
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Effect of elemental plasma on metal/Si films by partially ionized beam depositionJournal of Electronic Materials, 1991
- Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition techniqueApplied Physics Letters, 1989
- Reduction of interface hydrogen content by partially ionized beam deposition techniqueApplied Physics Letters, 1988
- Metallization by ionized cluster beam depositionIEEE Transactions on Electron Devices, 1987
- Non-equilibrium state and recovery of grain boundary structure. II. Energetic AnalysisPhysica Status Solidi (a), 1983
- Effect of texture and grain structure on electromigration in Al-0.5%Cu thin filmsThin Solid Films, 1981
- Linewidth dependence of electromigration in evaporated Al-0.5%CuApplied Physics Letters, 1980
- Diffusion in migrating interfacesActa Metallurgica, 1978