Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique
- 12 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (24) , 2443-2445
- https://doi.org/10.1063/1.101085
Abstract
It has been found that the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means. The PIB contained 0.8–1.2% of Al self‐ions and a bias potential of 2–5 kV was applied to the substrate during deposition. The enhancement of the electromigration resistance of the Al films is believed to be associated with the strong preferred orientation (in the [111] direction) that these films have. Surprisingly the preferred orientation effect is not accompanied by an enlargement of the Al grain size. This combination of preferred orientation and small grain size may find important applications in future very large scale integrated metallization.Keywords
This publication has 13 references indexed in Scilit:
- Electromigration behavior of ionized cluster beam deposited aluminum films on SiO2Applied Physics Letters, 1988
- Electromigration in aluminum films prepared with a high rate magnetron sputtering cathodeJournal of Vacuum Science & Technology A, 1985
- Grain growth study in aluminum films and electromigration implicationsJournal of Applied Physics, 1985
- Electromigration-induced failure by edge displacement in fine-line aluminum-0.5% copper thin film conductorsJournal of Applied Physics, 1983
- Effect of texture and grain structure on electromigration in Al-0.5%Cu thin filmsThin Solid Films, 1981
- Linewidth dependence of electromigration in evaporated Al-0.5%CuApplied Physics Letters, 1980
- Effect of Redundant Microstructure on Electromigration-Induced FailureApplied Physics Letters, 1971
- ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORSApplied Physics Letters, 1970
- Electromigration Damage in Aluminum Film ConductorsJournal of Applied Physics, 1970
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969