Effect of Redundant Microstructure on Electromigration-Induced Failure
- 15 October 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (8) , 292-295
- https://doi.org/10.1063/1.1653923
Abstract
Aluminum films with grain boundaries staggered throughout the film thickness, and hence with nonoverlapping sites for electromigration‐induced failure, were prepared by vacuum deposition in layered or extremely fine‐grained form. Mean lifetimes before the occurrence of electrical opens were an order of magnitude larger than those for control films having non‐redundant grain structure. Heat‐treatment effects which reduced lifetimes to values comparable to control lifetimes were interpreted in terms of either a lifetime minimum for grain size ∼ 0.6 μ or disruption of the layered structure.Keywords
This publication has 9 references indexed in Scilit:
- The effect of copper additions on electromigration in aluminum thin filmsMetallurgical Transactions, 1971
- Electromigration Damage of Grain-Boundary Triple Points in Al Thin FilmsJournal of Applied Physics, 1971
- ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORSApplied Physics Letters, 1970
- Dependence of Electromigration-Induced Failure Time on Length and Width of Aluminum Thin-Film ConductorsJournal of Applied Physics, 1970
- Reduction of Electromigration in Aluminum Films by Copper DopingIBM Journal of Research and Development, 1970
- Electromigration Damage in Aluminum Film ConductorsJournal of Applied Physics, 1970
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969
- Electromigration failure modes in aluminum metallization for semiconductor devicesProceedings of the IEEE, 1969
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968