Gettering in high resistive float zone silicon wafers for silicon detector applications
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (1) , 290-294
- https://doi.org/10.1109/23.34451
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- New intrinsic gettering process in silicon based on interactions of silicon interstitialsJournal of Applied Physics, 1986
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in SiJournal of Applied Physics, 1975
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971