Epitaxial InAs-coupled superconducting junctions

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Abstract
Homoepitaxial n-type InAs-coupled superconducting junctions are investigated. The n-type channel layer on a p-type substrate has nearly the same mobility as bulk crystal and the layer can be isolated electrically from the substrate by the built-in potential at the p-n interface. As a result, the critical current-normal resistance (IC RN ) product of the homoepitaxial n-type InAs-coupled junction is at least 30 times better than those of the bulk n-type ones. The coherence length ξN is calculated using the experimentally obtained carrier concentration, mobility, and effective mass. Temperature dependence of IC agrees with calculations based on the proximity effect theory which can be applied to the intermediate regime between the clean and dirty limits.