Electroluminescence from InGaAs/InAlAs HEMTs
- 7 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (14) , 1181-1183
- https://doi.org/10.1049/el:19940775
Abstract
Electroluminescence has been observed from InGaAs/InAlAs HEMTs under low bias conditions confirming the presence of holes caused by impact ionisation. The field required for the onset of electroluminescence and the kink effect are similar, suggesting that the kink effect is associated with impact ionisation.Keywords
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