Experimental characterization of hot-electron-induced effects and light emission in heterostructure devices
- 1 May 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (5S) , 651-658
- https://doi.org/10.1088/0268-1242/9/5s/068
Abstract
This paper reviews the most recent experimental results concerning the characterization of hot-electron effects and light emission in GaAs MESFETS, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMTS), and AlGaAs/GaAs heterojunction bipolar transistors (HBTS). In MESFETS and HEMTS, light emission has been correlated with impact-ionization-induced gate current, providing insights into possible emission mechanisms. In HBTS, impact ionization can be evaluated by measuring the changes in the base current as a function of base-collector voltage. The measured multiplication factor correlates well with the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime.Keywords
This publication has 22 references indexed in Scilit:
- Monte Carlo simulation of minority carrier transport and light emission phenomena in GaAs devicesSemiconductor Science and Technology, 1994
- Band-structure effects in the hot-carrier emission spectrum of GaAs FET devicesSemiconductor Science and Technology, 1994
- Hot-carrier luminescence in SiPhysical Review B, 1992
- Breakdown voltage enhancement from channel quantization in InAl/As/n/sup +/-InGaAs HFET'sIEEE Electron Device Letters, 1992
- Impact ionization and light emission in AlGaAs/GaAs HEMT'sIEEE Transactions on Electron Devices, 1992
- Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealingIEEE Transactions on Electron Devices, 1992
- The Gate-Bias Dependency of Breakdown Location in GaAs Metal Semiconductor Field Effect Transistors (MESFETs)Japanese Journal of Applied Physics, 1991
- High-power V-band pseudomorphic InGaAs HEMTIEEE Electron Device Letters, 1991
- Photoluminescence of the residual shallow acceptor in InxGa1−xAs grown on GaAs(001) by molecular beam epitaxySolid State Communications, 1989
- Hot-electron-induced photon and photocarrier generation in Silicon MOSFET'sIEEE Transactions on Electron Devices, 1984