Photoluminescence of the residual shallow acceptor in InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy
- 1 May 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 70 (5) , 505-509
- https://doi.org/10.1016/0038-1098(89)90940-x
Abstract
No abstract availableKeywords
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