A physically-based low-frequency noise model for NFD SOI MOSFET's
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 1078621X,p. 23-24
- https://doi.org/10.1109/soi.1998.723084
Abstract
The floating-body effect (FBE) in nonfully-depleted (NFD) SOI MOSFETs gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in the noise spectrum and the AC output impedance.Keywords
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