Optical Studies of Vanadium in Gallium Phosphide

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Abstract
The results of optical absorption, luminescence, luminescence excitation, and temperature‐dependent Hall‐effect measurements on semi‐insulating n‐type GaP:V and n‐conducting GaP:V are reported. The VGa2+/VGa3+ acceptor level is found at Ec − 0.58 eV. Absorptions due to photoionization transitions from and into this level can be identified. The absorption bands due to the transitions 3A2 → 3T1(F) and → 3T1(P) of VGa3+ are measured, both absorptions include three zerophonon lines as well as phonon replica. At low temperatures the photoinduced rechargings VGa3+ ↔ VGa2+ are investigated and interpreted in terms of the three charge states of VGa and the excitation of electrons from the PGa4+P4 anti‐site centre.

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