Theory of high-field-domain structures in superlattices
- 15 December 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (24) , 18426-18435
- https://doi.org/10.1103/physrevb.50.18426
Abstract
A number of experimental works provide evidence for the existence of high-field domains in superlattices when the applied voltage exceeds some critical value. A theoretical description of the structure of such a domain is developed. We confine ourselves to the case of narrow-band superlattices, where electrons are strongly localized in the wells. We find that the minimum length of the high-field domain can be larger than one superlattice period. The maximum current in the oscillating part of the I-V characteristic can be significantly smaller than the value of the current at the voltage where the first instability comes aobut. The oscillation period can be considerably smaller than the value corresponding to the energy separation between the first and the second level in a well. For the case of the domain formation at some distance from the anode, we study the field distribution in the low-field region downstream of the domain.Keywords
This publication has 23 references indexed in Scilit:
- Coexistence of Wannier–Stark localization and negative differential velocity in superlatticesApplied Physics Letters, 1992
- Optical studies of electric field domains in GaAs-As superlatticesPhysical Review B, 1990
- Transport through InGaAs-InP superlattices grown by chemical beam epitaxyJournal of Applied Physics, 1989
- Intersubband emission from semiconductor superlattices excited by sequential resonant tunnelingPhysical Review Letters, 1989
- Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW DiodesJapanese Journal of Applied Physics, 1987
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domainPhysical Review B, 1987
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin DiodesJapanese Journal of Applied Physics, 1986
- New Transport Phenomenon in a Semiconductor "Superlattice"Physical Review Letters, 1974