Growth and characterisation of InAs/InGaSb/InAs/AlSbinfrared laser structures
- 5 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (3) , 270-272
- https://doi.org/10.1049/el:19981221
Abstract
The authors have studied the molecular-beam epitaxial growth of type-II heterostructures for mid-wavelength infrared lasers. Based on their photoluminescence spectra and X-ray diffraction patterns, it is found that the quality of these heterostructures is highly sensitive to the growth temperature and the interfacial bond type.Keywords
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