Lamp Furance-annealed Au/Ni/AuGe ohmic contacts for GaAs MESFETs
- 16 October 1989
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 115 (2) , K171-K173
- https://doi.org/10.1002/pssa.2211150242
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ohmic Contacts to n-Type GaAs Using RTAPhysica Status Solidi (a), 1989
- Design and fabrication of 0.25- mu m MESFETs with parallel and pi -gate structuresIEEE Transactions on Electron Devices, 1989
- Rapid IR lamp alloying of nickel-based ohmic contacts on n-GaAsThin Solid Films, 1988
- Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAsElectronics Letters, 1984
- Au–Ge Ohmic Contact to n-GaAs by IR Lamp AlloyingJapanese Journal of Applied Physics, 1984