Rapid IR lamp alloying of nickel-based ohmic contacts on n-GaAs
- 1 December 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 167 (1-2) , 161-168
- https://doi.org/10.1016/0040-6090(88)90492-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Excimer laser annealed gold and silver ohmic contacts on+-GaAsPhysica Status Solidi (a), 1986
- The characterisation of GaAs NiAuGe ohmic contacts alloyed with an SiO2 overlayer for use in an ion implanted MESFET technologyPhysica B+C, 1985
- Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAsElectronics Letters, 1984
- Au–Ge Ohmic Contact to n-GaAs by IR Lamp AlloyingJapanese Journal of Applied Physics, 1984
- An improved AuGe ohmic contact to n-GaAsSolid-State Electronics, 1982
- Microstructure and Resistivity of Laser‐Annealed Au‐Ge Ohmic Contacts on GaAsJournal of the Electrochemical Society, 1981
- Metallization systems for ohmic contacts to p- and n-type GaAsInternational Journal of Electronics, 1979
- Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic PropertiesJapanese Journal of Applied Physics, 1975
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975
- Very low resistance NiAuGeNi contacts to n-GaAsSolid-State Electronics, 1974