Depth resolution improvement in AES sputter profiling of Ni/Cr multilayers on rough substrates using two ion beams

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Abstract
Three point depth profiling by scanning Auger microscopy and simultaneous sputtering with one ion beam and subsequent addition of a second ion beam, incident from a different direction, is applied to multilayer Ni/Cr structures deposited on a rough (roughness Ra = 2.3 μm) silicon substrate. Depending on the analysed microarea of about 1 μm diameter, depth resolutions between 25 nm and 44 nm at 125 nm sputtered depth were obtained using one ion beam. The extent of the improvement in Δz after sputtering with two ion beams is directly related to the absolute values obtained in each of the three microareas. The results are explained in terms of shadowing and redeposition effects which are diminished by the use of sputtering with two ion guns.