Alternatives to Optimizer-Based Methods for Microwave Transistor Small-Signal Equivalent Circuit Parameters and S-Parameter Errors

This publication has 16 references indexed in Scilit:

• A Measurement Method for Accurate Characterization and Modeling of MESFET Chips
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
  IEEE Transactions on Electron Devices, 1989
• A new method for determining the FET small-signal equivalent circuit
  IEEE Transactions on Microwave Theory and Techniques, 1988
• Frequency dependence of GaAs FET equivalent circuit elements extracted from the measured two-port S parameters
  Proceedings of the IEEE, 1988
• The performance of submicrometer gate length GaAs MESFET's
  IEEE Transactions on Electron Devices, 1983
• Measurement of the Extrinsic Series Elements of a Microwave Mesfet Under Zero Current Conditions
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
• Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHz
  Electronics Letters, 1975
• Current saturation and small-signal characteristics of GaAs field-effect transistors
  IEEE Transactions on Electron Devices, 1973
• Computer-Aided Determination of the Small-Signal Equivalent Network of a Bipolar Microwave Transistor
  IEEE Transactions on Microwave Theory and Techniques, 1972
• Equivalent networks for three different microwave bipolar transistor packages in the 2–10 GHz range
  Electronics Letters, 1971