Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (6) , 1273-1281
- https://doi.org/10.1109/16.137304
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A model-based comparison of AlInAs/GaInAs and InP/GaInAs HBT's: a Monte Carlo studyIEEE Transactions on Electron Devices, 1990
- Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1990
- Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuitsIEEE Electron Device Letters, 1989
- Transient Monte Carlo analysis and application to heterojunction bipolar transistor switchingIEEE Transactions on Electron Devices, 1989
- Dependence of base built-in field for InAlAs/InGaAs HBT characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistorsIEEE Electron Device Letters, 1986
- Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1984
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982