Interaction of Co with Si and SiO2 during rapid thermal annealing
- 1 June 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (11) , 7612-7619
- https://doi.org/10.1063/1.347530
Abstract
The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x‐ray diffraction, Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050 °C.This publication has 15 references indexed in Scilit:
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