Effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen
- 20 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (21) , 2202-2204
- https://doi.org/10.1063/1.102352
Abstract
The effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen has been examined under ultrahigh vacuum conditions by employing molecular beam techniques and x-ray photoelectron spectroscopy. Ion bombardment leads to a significant enhancement in the rate of oxidation. By modulating both the oxygen and ion (Ar+ ) fluxes several possible mechanisms for the enhanced rate can be eliminated. Of the remaining possibilities, a mechanism involving competition between ion-induced oxygen incorporation and sputtering appears most likely.Keywords
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