Photoluminescence of nanocrystallites embedded in hydrogenated amorphous silicon films

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Abstract
We have fabricated light‐emitting nanocrystallites embedded in an a‐Si:H matrix using a conventional plasma‐enhanced chemical‐vapor‐deposition system. It was found that the photoluminescence properties are directly related to the deposition parameters. The quantum size effect model is proposed to explain the photoluminescence. Two structural prerequisites are proposed for this kind of films to exhibit effective light emission: One is an upper limit for mean crystallite size of about 3.4 nm, the other is an upper limit for crystallinity of about 30%.