Silicon Carbide: Progress in Crystal Growth
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987
- Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor depositionApplied Physics Letters, 1986
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Whatever Happened to Silicon CarbideIEEE Transactions on Industrial Electronics, 1982
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- Polymorphism and Polytypism in CrystalsPhysics Today, 1967
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966
- Growth of α-SiC Single Crystals from Chromium SolutionJournal of the Electrochemical Society, 1964