InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
- 4 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18) , 2258-2260
- https://doi.org/10.1063/1.107047
Abstract
The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1−xGaxAs monolayer to InAs1−xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P‐As exchange at the lower interface (InGaAs on InP) leading to InAs1−xPx interfacial islands, which are larger than the excitonic diameter.Keywords
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