Characteristics of the RuO2-n-GaAs Schottky barrier
- 14 April 1985
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 18 (4) , 731-738
- https://doi.org/10.1088/0022-3727/18/4/017
Abstract
It is shown that the RuO2-n-GaAs junction behaves as a Schottky barrier. From impedance measurements and current-voltage measurements as a function of temperature, a barrier height of about 0.7 eV was established. This value is discussed in the light of existing Schottky barrier theories.Keywords
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