High-efficiency Al0.3Ga0.7As solar cells grown by molecular beam epitaxy
- 5 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (14) , 1075-1077
- https://doi.org/10.1063/1.98744
Abstract
This letter reports the growth of high‐efficiency Al0.3Ga0.7As solar cells by molecular beam epitaxy. As the growth temperature increases from 650 to 750 °C, the concentration of midgap electron traps in the active layers decreases from 4×1015 to less than 3×1013 cm−3 and the hole diffusion length in the layers improves from 2.0 to 2.6 μm. For cells grown at 750 °C, an efficiency of 14.6% (AM1.5, 100 mW/cm2 for an active area) is obtained.Keywords
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