X‐ray photoelectron spectroscopy and surface charge build‐up used to study residue on aluminum contacts on integrated circuits
- 1 January 1989
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 14 (1-2) , 39-45
- https://doi.org/10.1002/sia.740140110
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Summary Abstract: X-ray photoelectron spectroscopy surface charge buildup used to study residue in deep features on integrated circuitsJournal of Vacuum Science & Technology A, 1988
- Comparative Investigation of CF 4 ‐ Plasma , Ar‐Plasma, and Dilute ‐ HF ‐ Dip Cleaning Methods for (Al‐Si)/n+Si ContactsJournal of the Electrochemical Society, 1987
- Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of SiJournal of the Electrochemical Society, 1985
- Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etchingApplied Physics Letters, 1984
- Plasma-assisted etchingPlasma Chemistry and Plasma Processing, 1982
- An XPS and Auger investigation of CF+3 ion bombardment of siliconApplications of Surface Science, 1979
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- About the charging effect in X-ray photoelectron spectrometryJournal of Electron Spectroscopy and Related Phenomena, 1974
- Differential sample charging in ESCAJournal of Electron Spectroscopy and Related Phenomena, 1973
- External standards in x-ray photoelectron spectroscopy. Comparison of gold, carbon, and molybdenum trioxideAnalytical Chemistry, 1973