The isotropic assumption during the Czochralski growth of single semiconductors crystals
- 1 September 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 84 (3) , 349-358
- https://doi.org/10.1016/0022-0248(87)90262-4
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Proximity effect of dislocations on GaAs MESFET threshold voltageIEEE Transactions on Electron Devices, 1986
- EL2 distributions in doped and undoped liquid encapsulated Czochralski GaAsApplied Physics Letters, 1983
- Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current MeasurementsJapanese Journal of Applied Physics, 1982
- Dislocation Density and Sheet Resistance Variations Across Semi-Insulating GaAs WafersIEEE Transactions on Microwave Theory and Techniques, 1982
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting DiodesJournal of the Electrochemical Society, 1979
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Liquid encapsulated Czochralski growth of 35 mm diameter single crystals of GaPJournal of Crystal Growth, 1973
- Infrared Studies of Birefringence in SiliconJournal of Applied Physics, 1959
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956