Extremely rapid outdiffusion of n-type impurities in InP

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Abstract
During sealed ampoule annealing at 550 °C, an unexpected, deep diffuson front was observed in n‐type InP crystals using defect etching and cathodoluminescence (CL) imaging. The diffusivities of the fronts were determined to be 1–5×10−8 cm2 s−1 which is approximately two orders of magnitude greater than that of the rapidly diffusing Zn impurity. By measuring the changes in the CL intensity and the photoluminescence linewidth to determine the changes in carrier concentration, the diffusion fronts were shown to be caused by the outdiffusion of the dopants. Although outdiffusion of Cr and Fe, affecting an ∼1 μm surface region during thermal annealing at 550 °C for 30 min, has previously been reported for InP, we believe this is the first reported observation of rapid outdiffusion of n‐type impurities that can affect InP crystals to a substantial depth (∼200 μm) for similar annealing conditions.

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