Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications
- 1 June 1991
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 6 (6) , 1238-1247
- https://doi.org/10.1557/jmr.1991.1238
Abstract
A 70-nm-thick, 19-μΩ · cm TiSi2 layer is formed using a Ti-ion implantation technique. TiN/TiSi2 double layers, whose surface morphology is superior to that obtained with conventional deposition and reaction techniques, can also be simultaneously formed by Ti-ion implantation into monocrystalline Si screened with the Si3N4 film. Discrete pn-junction diodes with a shallow TiSi2 layer and Ti-polycide-gate MOS capacitors are fabricated to determine the influences of Ti-ion implantation on electrical characteristics. The leakage current of the B-doped p+n junction and As/P-doped n+p junction with Ti-ion implanted silicide layer is low enough for device applications. Silicide formation on the gate polycrystalline-Si does not affect the breakdown electric field strength of a 20-nm-thick gate oxide. MOS capacitors showed normal C-V characteristics.Keywords
This publication has 4 references indexed in Scilit:
- Al/W/TiN/sub x//TiSi/sub y//Si barrier technology for 1.0- mu m contactsIEEE Electron Device Letters, 1988
- Source—Drain contact resistance in CMOS with self-aligned TiSi2IEEE Transactions on Electron Devices, 1987
- Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal techniqueIEEE Transactions on Electron Devices, 1987
- Thermal stability of TiSi2 on mono- and polycrystalline siliconJournal of Applied Physics, 1986