Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures
- 14 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (24) , 2016-2018
- https://doi.org/10.1063/1.98278
Abstract
The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.Keywords
This publication has 14 references indexed in Scilit:
- I n s i t u arsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor depositionApplied Physics Letters, 1987
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial qualityJournal of Applied Physics, 1987
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerationsJournal of Applied Physics, 1987
- Summary Abstract: The role of low-energy ion bombardment during the growth of epitaxial TiN(100) films by reactive magnetron sputtering: Defect formation and annihilationJournal of Vacuum Science & Technology A, 1987
- Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial siliconApplied Physics Letters, 1987
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Plasma‐Enhanced Chemical Vapor Deposition of Silicon Epitaxial LayersJournal of the Electrochemical Society, 1984
- Effect of Si-Ge buffer layer for low-temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor depositionJournal of Applied Physics, 1983
- Effect of ion bombardment on the initial stages of thin film growthThin Solid Films, 1977
- Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°CSolid-State Electronics, 1973