Reactive ion etching of Nb thin films for Nb/AlAlOx/Nb Josephson tunnel junctions
- 1 March 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 239 (2) , 245-250
- https://doi.org/10.1016/0040-6090(94)90859-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Fabrication of micron size Nb/Al-Al/sub 2/O/sub 3//Nb junctions with a trilevel resist liftoff processIEEE Transactions on Magnetics, 1991
- Sloped niobium etching using CF4 and O2Journal of Vacuum Science & Technology A, 1990
- Plasma processing of niobium for the production of thin-film superconducting devicesVacuum, 1987
- Plasma etching of niobium with CF4/O2 gasesJournal of Vacuum Science & Technology A, 1983
- High quality refractory Josephson tunnel junctions utilizing thin aluminum layersApplied Physics Letters, 1983
- Reactive ion etching of niobiumJournal of Vacuum Science and Technology, 1981