Growth of InP crystals by the synthesis, solute diffusion method
- 1 June 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 43 (5) , 651-652
- https://doi.org/10.1016/0022-0248(78)90058-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- Optimization of growth conditions in the synthesis, solute diffusion growth of GaPJournal of Crystal Growth, 1976
- Growth of GaP single crystals by the synthesis, solute diffusion methodJournal of Crystal Growth, 1976
- Liquid encapsulated czochralski pulling of InP crystalsJournal of Electronic Materials, 1975
- A preliminary study of dislocations in indium and gallium phosphidesJournal of Materials Science, 1973
- A new method of growing GaP crystals for light-emitting diodesProceedings of the IEEE, 1973
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968